The NTE6810 is a byte鈥搊rgainzed memory in a 24鈥揕ead DIP type package designed for use in bus鈥?/div>
organized systems. It is fabricated with N鈥揷hannel silicon鈥揼ate technology. For ease of use, this
device operates from a single power supply, has compatibility with TTL and DTL, and needs no clocks
or refreshing because of static operation.
The memory is compatible with the 6800 Microcomputer Family, providing random storage in byte
increments. Memory expansion is provided through multiple Chip Select inputs.
Features:
D
Organized as 128 Bytes of 8鈥揃its
D
Static Operation
D
Bidirectional Three鈥揝tate Data Input/Output
D
Six Chip Select Inputs (Four Active Low, Two Active High)
D
Single 5V Power Supply
D
TTL Compatible
D
Maximum Access Time: 450ns
Absolute Maximum Ratings:
Supply Voltage, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +7V
Input Voltage, V
in
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?.3 to +7V
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0擄 to +70擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction to Ambient, R
螛JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +120擄C/W
Note 1. This device contains circuitry to protect the inputs against damage due to high static voltages
or electric fields; however, it is advised that normal precautions be taken to avoid application
of any voltage higher than maximum rated voltages to this high impedance circuit. Reliability
of operation is enhanced if unused inputs are tied to an appropriate logic voltage (e.g., either
V
SS
or V
CC
).
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3
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