NTE67
MOSFET
N鈥揅h, Enhancement Mode
High Speed Switch
Description:
The NTE67 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed
power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features:
D
Lower R
DS(ON)
D
Improved Inductive Ruggedness
D
Fast Switching Times
D
Lower Input Capacitance
D
Extended Safe Operating Area
D
Improved High Temperature Reliability
Absolute Maximum Ratings:
Drain鈥揝ource Voltage (T
J
= +25擄C to +150擄C), V
DSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Drain鈥揋ate Voltage (R
GS
= 1M鈩? T
J
= +25擄C to +125擄C), V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . 400V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵20V
Continuous Drain Current, I
D
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
T
C
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A
Pulsed Drain Current (Note 2), I
DM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Pulsed Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵1.5A
Single Pulsed Avalanche Energy (Note 3), E
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290mJ
Avalanche Current, I
AS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5A
Total Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6W/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/8鈥?from case, 5sec max.), T
L
. . . . . . . . . . . . . . . . . . . +300擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67K/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80K/W
Thermal Resistance, Case鈥搕o鈥揝ink (Mounting surface flat, smooth, and greased), R
thCS
0.24K/W
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
Note 3. L = 17mH, V
dd
= 50V, R
G
= 25鈩? Starting T
J
= +25擄C.
1
2
3
