The NTE6664 is a 65,536 Bit, high鈥搒peed, dynamic Random Access Memory. Organized as 65,536
one鈥揵it words and fabricated using HMOS high鈥損erformance N鈥揅hannel silicon鈥揼ate technology,
this 5V only dynamic RAM combines high performance with low cost and improved reliability.
By multiplying row鈥?and column鈥?address inputs, the NTE6664 requires only eight address lines and
permits packaging in a standard 16鈥揕ead DIP package. Complete address decoding is done on chip
with address latches incorporated. Data out is controlled by CAS allowing for greater system flexibility.
All inputs and outputs, including clocks, are fully TTL compatible. The NTE6664 incorporates a one鈥?/div>
transistor cell design and dynamic storage techniques. In addition to the RAS鈥搊nly refresh mode,
the refresh control function available on Pin1 provides two additional modes of refresh, automatic and
self refresh.
Features:
D
Single +5V Operation (鹵10%)
D
Maximum Access Time: 150ns
D
Low Power Dissipation:
302.5mW Max (Active)
22mW Max (Standby)
D
Three State Data Output
D
Early鈥揥rite Common I/O Capability
D
D
D
D
D
D
128 Cycle, 2ms Refresh
Control on Pin1 for Automatic or Self Refresh
RAS鈥揙nly Refresh Mode
CAS Controlled Output
Fast Page Mode Cycle Time
Low Soft Error Rate: < 0.1% per 1000 Hrs
Absolute Maximum Ratings:
(Note 1)
Voltage on V
CC
Supply Relative to V
SS
, V
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥? to +7V
Voltage Relative to V
SS
for Any Pin Except V
CC
, V
in
, V
out
. . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥? to +7V
Data Out Current (Short Circuit), I
out
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Temperature Range, T
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +70擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS.
Exposure to higher than recommended voltages for extended periods of time could affect
the device reliability.
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