NTE65
Silicon NPN Transistor
High Voltage, Low Noise for CATV, MATV
Description:
The NTE65 is silicon NPN transistor designed primarily for use in high鈥揼ain, low鈥搉oise, small鈥搒ignal
amplifier and also used in applications requiring fast switching times.
Features:
D
High Current鈥揋ain Bandwidth Product
D
Low Noise Figure
D
High Power Gain
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (T
A
= +60擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180mW
Derate Above 60擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thremal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 14mA
25
鈥?/div>
250
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CBO
V
CB
= 10V, I
E
= 0
15
20
3
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
V
V
V
nA
Symbol
Test Conditions
Min
Typ
Max Unit
NTE65 產(chǎn)品屬性
NTE
置換半導體
詳細信息
1
NTE65相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power Audio, Disk Hea...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 140V, TO-3; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -140V TO-3; Transistor Polarity:PNP...
NTE Electronics
-
英文版
Silicon NPN Transistor High Voltage, Horizontal Deflection O...
NTE
-
英文版
Silicon NPN Transistor High Gain, Low Noise Amp
NTE
-
英文版
Silicon NPN Transistor UHF High Speed Switch
NTE
-
英文版
Silicon NPN Transistor High Voltage, Low Noise for CATV, MAT...
NTE
-
英文版
MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE
-
英文版
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Ch...
NTE Electronics
-
英文版
MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE
-
英文版
High Speed Switch; Transistor Polarity:N Channel; Drain Sour...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -250V TO-3; Transistor Polarity:PNP...
NTE Electronics
-
英文版
Silicon NPN Transistor UHF/VHF Amplifier
NTE
-
英文版
Silicon Varistor Temperature Compensating Diode
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
1
2
