NTE6508
Integrated Circuit
CMOS, 1K Static RAM (SRAM)
Description:
The NTE6508 is a 1024 x 1 fully static CMOS RAM in a 16鈥揕ead DIP type package fabricated using
self鈥揳ligned silicon gate technology. Synchronous circuit design techniques are employed to acheive
high performance and low power operation. On chip latches are provided for address allowing effeci-
ent interfacing with microprocessor systems. The data output buffers can be forced to a high imped-
ance state for use in expanded memory arrays.
Features:
D
Low Power Standby: 50碌W Max
D
Low Power Operation: 20mW/MHz Max
D
Fast Access Time: 300ns Max
D
Data Retention: 2V Min
D
TTL Compatible Input/Output
D
High Output Drive: 2 TTL Loads
D
On鈥揅hip Address Register
Absolute Maximum Ratings:
(Note 1)
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V
Input, Output or I/O Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND 鈥?.3V to V
CC
+0.3V
Typical Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5mA/MHz increase in I
CC(OP)
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1925 Gates
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 10s max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300擄C
Note 1. Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage
to the device. This is a stress only rating and operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not im-
plied. This device is sensitive to electrostatic discharge, users should follow proper IC han-
dling procedures.
Recommended Operating Conditions:
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +85擄C
1
2
3
4
