NTE6410
Unijunction Transistor (UJT)
Description:
The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and
timing circuits, sensing circuits and thyristor trigger circuits.
Absolute Maximum Ratings:
(T
A
= +25擄C unless other specified)
RMS Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0mW/擄C
RMS Emitter Current, I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak鈥揚ulse Emitter Current (Note 1), I
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Emitter Reverse Voltage, V
B2E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage (Note 2), V
B2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Duty cycle
鈮?/div>
1%, PRR = 10 PPS
Note 2. Based upon power dissipation at T
A
= +25擄C
Electrical Characteristics:
(T
A
= +25擄C unless other specified)
Parameter
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance Temperature Coefficient
Emitter Saturation Voltage
Modulated Interbase Current
Emitter Reverse Current
Peak鈥揚oint Emitter Current
Valley鈥揚oint Current
Base鈥揙ne Peak Pulse Voltage
Symbol
Test Conditions
V
B2B1
= 10V, Note 3
Min
0.70
4.0
0.1
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4.0
5.0
Typ
鈥?/div>
6.0
鈥?/div>
2.5
15
0.005
1.0
7.0
8.0
Max
0.85
9.1
0.9
鈥?/div>
鈥?/div>
1.0
5.0
鈥?/div>
鈥?/div>
k鈩?/div>
%/擄C
V
mA
碌A(chǔ)
碌A(chǔ)
mA
V
Unit
畏
R
BB
偽R
BB
V
BE1(sat)
V
B2B1
= 10V, I
E
= 50mA, Note 4
I
B2(Mod)
I
EB2O
I
P
I
V
V
OB1
V
B2B1
= 10V, I
E
= 50mA
V
B2E
= 30V, I
B1
= 0
V
B2B1
= 25V
V
B2B1
= 20V, R
B2
= 100鈩? Note 4
Note 3. Intrinsic standoff ratio, is defined in terms of peak鈥損oint voltage, V
P
, by means of the equa-
tion: V
P
=
畏
V
B2B1
V
F
, where V
F
is approximately 0.49 volts at +25擄C @ I
F
= 10碌A(chǔ) and de-
creases with temperature at approximately 2.5mV/擄C. Components R
1
, C
1
, and the UJT
form a relaxation oscillator, the remaining circuitry serves as a peak鈥搗oltage detector. The
forward drop of Diode D
1
compensates for V
F
. To use, the 鈥渃all鈥?button is pushed, and R
3
is adjusted to make the current meter, M
1
, read full scale. When the 鈥渃all鈥?button is released,
the value of
畏
is read directly from the meter, if full scale on the meter reads 1.0.
Note 4. Use pulse techniques: PW
鈭?/div>
300碌s, duty cycle
鈮?/div>
2.0% to avoid internal heating, which may
result in erroneous readings.
NTE6410相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power Audio, Disk Hea...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 140V, TO-3; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -140V TO-3; Transistor Polarity:PNP...
NTE Electronics
-
英文版
Silicon NPN Transistor High Voltage, Horizontal Deflection O...
NTE
-
英文版
Silicon NPN Transistor High Gain, Low Noise Amp
NTE
-
英文版
Silicon NPN Transistor UHF High Speed Switch
NTE
-
英文版
Silicon NPN Transistor High Voltage, Low Noise for CATV, MAT...
NTE
-
英文版
MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE
-
英文版
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Ch...
NTE Electronics
-
英文版
MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE
-
英文版
High Speed Switch; Transistor Polarity:N Channel; Drain Sour...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -250V TO-3; Transistor Polarity:PNP...
NTE Electronics
-
英文版
Silicon NPN Transistor UHF/VHF Amplifier
NTE
-
英文版
Silicon Varistor Temperature Compensating Diode
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
1
2
