NTE6409
Unijunction Transistor
Description:
The NTE6409 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D
Low Peak Point Current: 2碌A(chǔ) Max
D
Low Emitter Reverse Current: 200nA Max
D
Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings:
(T
A
= +25擄C, unless otherwise specified)
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, I
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), i
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, V
B2E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, V
B2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Derate 3mW/擄C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base鈥揟wo) must be limited by the external circuitry.
Note 2. Capacitor discharge: 10碌F or less, 30V or less
1
2
