NTE6403
Integrated Circuit
Silicon Bilateral Switch (SBS)
Description:
The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of
a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/擄C temperature coeffi-
cient and excellently matched characteristics in both directions. A gate lead is provided to eliminate
rate effect and to obtain triggering at lower voltages.
The NTE6403 is specifically designed and characterized for applications where stability of switching
voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is
ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control cir-
cuits.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Peak Recurrent Forward Current (PW = 10碌s, Duty Cycle = 1%, T
A
= +25擄C) . . . . . . . . . . . . . . . 1A
Peak Non鈥揜ecurrent Forward Current (PW = 10碌s, T
A
= +25擄C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA
DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Derate linearly to zero at +125擄C.
Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited
by maximum power rating.
Electrical Characteristics:
(T
A
= +25擄C, Note 3 unless otherwise specified)
Parameter
Static
Switching Voltage
Switching Current
Absolute Switching Voltage Difference
Absolute Switching Current Difference
Holding Current
OFF State Current
V
S
I
S
|V
S2
鈥?V
S1
|
|I
S2
鈥?I
S1
|
I
H
I
B
T
C
V
F
I
GF
V
F
= 5V
T
A
= +25擄C
T
A
= +85擄C
Temperature Coefficient of Switching Voltage
ON State Forward Voltage Drop
Forward Gate Current to Trigger
T
A
= 鈥?5擄 to +85擄C
I
F
= 175mA
V
F
= 5V, R
L
= 1k鈩?/div>
7.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鹵0.05
鈥?/div>
鈥?/div>
9.0
120
200
10
.5
0.1
10.0
鈥?/div>
1.7
100
V
碌A(chǔ)
mV
碌A(chǔ)
mA
碌A(chǔ)
碌A(chǔ)
%/擄C
V
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply
in either direction of current flow.
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