NTE6401
Unijunction Transistor
Description:
The NTE6401 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger
circuits.
Features:
D
Low Peak Point Current: 5碌A(chǔ) (Max)
D
Low Emitter Reverse Current: .005碌A(chǔ) (Typ)
D
Passivated Surface for Reliability & Uniformity
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Power Dissipation (Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
RMS Emitter Current, I
E(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Peak Pulse Emitter Current (Note 2), i
E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Emitter Reverse Voltage, V
B2E
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Interbase Voltage, V
B2B1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to 125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1 Derate 3mW/擄C increase in ambient temperature. The total power dissipation (available
power to Emitter and Base鈥揟wo) must be limited by the external circuitry.
Note 2 Capacitor discharge 鈥?10碌F or less, 30 volts or less
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Intrinsic Standoff Ratio
Interbase Resistance
Interbase Resistance Temperature
Coefficient
Symbol
Test Conditions
V
B2B1
= 10V, Note 3
V
B2B1
= 3V, I
E
= 0
Min
0.56
4.7
0.1
Typ
鈥?/div>
7.0
鈥?/div>
Max
0.75
9.1
0.9
Unit
鈥?/div>
k鈩?/div>
%/擄C
畏
r
BB
ar
BB
Note 3. Intrinsic standoff ratio,
畏
is defined by equation:
畏
= V
P
鈥?V
F
V
B2B1
where
V
P
= Peak Point Emitter Voltage
V
B2B1
= Interbase Voltage
V
F
= Emitter to Base鈥揙ne Junction Diode Drop (鈭?0.45V @ 10碌A(chǔ))
1
2
