NTE63
Silicon NPN Transistor
High Gain, Low Noise Amp
Description:
The NTE63 is a silicon NPN high frequency transistor designed primarily for use in high鈥揼ain, low
noise tuned and wiseband small鈥搒ignal amplifiers and applications requiring fast switching times.
Features:
D
High Current Gain鈥揃andwidth Product: f
T
= 5GHz Typ @ f = 1GHz
D
High Power Gain: G
pe
= 12.5dB Min @ f = 1GHz
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Total Device Dissipation (T
L
= +50擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Derate Above 50擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揕ead, R
thJL
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)CEO
I
C
= 1mA, I
B
= 0
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
12
20
2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
V
V
V
nA
Symbol
Test Conditions
Min
Typ Max Unit
NTE63 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE63相關(guān)型號(hào)PDF文件下載
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