NTE62
Silicon NPN Transistor
High Voltage, Horizontal Deflection Output for TV
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unles otherwise specified)
Parameter
Collector Cutoff Current
Symbol
I
CBO
I
CEO
Emitter Cutoff Current
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
Transition Frequency
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
f
Test Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 2500V, I
E
= 0
V
CE
= 900V, I
B
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 10V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 1.5A, I
B
= 0.5A
I
C
= 1.5A
Min
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鈥?/div>
鈥?/div>
鈥?/div>
3
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
50
1.0
10
1.0
15
10
1.25
1.0
Unit
碌A(chǔ)
mA
mA
mA
next
NTE62 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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