NTE6248
Silicon Schottky Barrier Rectifier
Features:
D
Guarding for Stress Protection
D
Low Forward Voltage
D
High Current Capability
D
High Surge Capability
Maximum Ratings and Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified. Resistive or inductive load.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Maximum RMS Voltage, V
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V
Maximum DC Blocking Voltage, V
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Maximum Average Rectified Forward Current (T
C
= +100擄C), I
F(AV)
. . . . . . . . . . . . . . . . . . . . . . . 16A
Peak Forward Surge Current, I
FSM
(8.3ms single half sine鈥搘ave superimposed on rated load) . . . . . . . . . . . . . . . . . . . . . . . 250A
Maximum Instantaneous Forward Voltage (I
F
= 16A), V
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5V
Maximum DC Reverse Current (rated DC Blocking Voltage), I
R
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10碌A
T
C
= +100擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500碌A
Maximum Reverse Recovery Time (T
J
= +25擄C, Note 1), T
RR
. . . . . . . . . . . . . . . . . . . . . . . . . . . 50ns
Typical Junction Capacitance (Note 2), C
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145pF
Typical Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5擄C/W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Note 1. Reverse Recovery Test Conditions: I
F
= 500mA, I
R
= 1A, recover to 250mA.
Note 2. Measured at 1MHz and applied reverse voltage of 4V.
1
2
