NTE621
Silicon Rectifier, General Purpose, High Voltage,
Standard Recovery
(Surface Mount)
Features:
D
High Temperature Metallurgically Bonded
D
Glass Passivated Junction
D
High Temperature Soldering Guaranteed:
+450擄C/5 Seconds at Terminals. Complete Device Submersible Temperature of
+260擄C/10 Seconds in Solder Bath.
Maximum Ratings and Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified.
60Hz, resistive or inductive load. For capacitive load, derate current by 20%.)
Maximum Recurrent Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Maximum RMS Voltage, V
RMS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280V
Maximum DC Blocking Voltage, V
DC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Maximum Average Forward Rectified Current, I
T(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Forward Surge Current, I
FSM
(8.3ms Single Half Sine鈥揥ave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 30A
Maximum Instantaneous Forward Voltage (I
T
= 1A), V
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1V
Maximum DC Reverse Current (V
DC
= 400V), I
R
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10碌A
T
A
= +125擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50碌A
Maximum Full Load Reverse Current (Full Cycle Average at T
A
= +75擄C), I
R(AV)
. . . . . . . . . . . 30碌A
Typical Junction Capacitance (Note 1), C
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15pF
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揟erminal (Note 2), R
thJL
. . . . . . . . . . . . . . . . . . . 30擄C/W
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 3), R
thJA
. . . . . . . . . . . . . . . . . . . 75擄C/W
Note 1. Measured at 1MHz and applied reverse voltage of 4V
DC
.
Note 2. Thermal resistance, junction鈥搕o鈥搕erminal, 6.0mm
2
copper pads to each terminal.
Note 3. Thermal resistance, junction鈥搕o鈥揳mbient, 6.0mm
2
copper pads to each terminal.
1
2
