NTE617
Varactor Diode
Description:
The NTE617 is a dual voltage鈥搗ariable capacitance diode designed for FM tuning, general frequency
control and tuning, or any top鈥搊f鈥搕he鈥搇ine application requiring back鈥搕o鈥揵ack diode configurations
for minimum signal distortion and detuning. This device is supplied in the popular TO92 type plastic
package for high volume, economical requirements of consumer and industrial applications.
Features:
D
High Figure of Merit: Q = 140 (Typ) @ V
R
= 3V, f = 100MHz
D
Guaranteed Capacitance Range: 34 鈥?39pF @ V
R
= 3V
D
Dual Diodes 鈥?Save Space and Reduce Cost
D
Monolithic Chip Provides Near Perfect Matching: Guaranteed
鹵1%
(Max) Over Specified
Tuning Range
Absolute Maximum Ratings (Each Device):
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/擄C
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics (Each Device):
(T
A
= +25擄C unless otherwise specified)
Parameter
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
Series Inductance
Case Capacitance
Diode Capactance Temperature
Coefficient
Diode Capacitance
Figure of Merit
Capacitance Ratio
Symbol
BV
R
I
R
L
S
C
C
TC
C
C
T
Q
C
R
Test Conditions
I
R
= 10碌A(chǔ)
T
A
= +25擄C
T
A
= +60擄C
f = 250MHz, Lead Length
[
1/16鈥?/div>
f = 1MHz, Lead Length
[
1/16鈥?/div>
V
R
= 4V, f = 1MHz
V
R
= 3V, f = 1MHz
V
R
= 3V, f = 100MHz, Note 1
C
3
/C
30
, f = 1MHz
V
R
= 30V
Min
32
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
34
100
2.5
Typ
鈥?/div>
鈥?/div>
鈥?/div>
6
0.18
280
鈥?/div>
鈥?/div>
鈥?/div>
Max
鈥?/div>
50
500
鈥?/div>
鈥?/div>
Unit
V
nA
nA
nH
pF
400 ppm/擄C
39
140
2.8
pF
Note 1. Q =
1
2
蟺
f C
T
R
S
NTE617相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors High Power Audio, Disk Hea...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 140V, TO-3; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -140V TO-3; Transistor Polarity:PNP...
NTE Electronics
-
英文版
Silicon NPN Transistor High Voltage, Horizontal Deflection O...
NTE
-
英文版
Silicon NPN Transistor High Gain, Low Noise Amp
NTE
-
英文版
Silicon NPN Transistor UHF High Speed Switch
NTE
-
英文版
Silicon NPN Transistor High Voltage, Low Noise for CATV, MAT...
NTE
-
英文版
MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE
-
英文版
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Ch...
NTE Electronics
-
英文版
MOSFET N-Ch, Enhancement Mode High Speed Switch
NTE
-
英文版
High Speed Switch; Transistor Polarity:N Channel; Drain Sour...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -250V TO-3; Transistor Polarity:PNP...
NTE Electronics
-
英文版
Silicon NPN Transistor UHF/VHF Amplifier
NTE
-
英文版
Silicon Varistor Temperature Compensating Diode
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE
-
英文版
Voltage Variable Capacitance Diode (Tuning Diode)
NTE [NTE E...
1
2
