NTE6093
Silicon Rectifier
Dual, Schottky Barrier
Description:
The NTE6093 is a silicon rectifier in a TO3P type package designed using the Schottky Barrier principle
with a Molybenum barrier metal.
Features:
D
Low Forward Voltage
D
Guard鈥揜ing for Stress Protection
D
Low Power Loss & High Efficiency
D
Guarantee Reverse Avalanche
D
+125擄C Operating Junction Temperature
D
High Surge Capacity
D
Low Storied Charge majority Carrier Conduction
D
Low Switching Noise
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Working Peak Reverse Voltage, V
RWM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DC Blocking Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
RMS Reverse Voltage, V
R(RMS)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Average Rectifier Forward Current (V
R
= 60V, T
C
= +125擄C), I
F(AV)
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Peak Repetitive Forward Current (V
R
= 60V, Square Wave, T
C
= +125擄C), I
FM
. . . . . . . . . . . . . 60A
Non鈥揜epetitive Peak Surge Current, I
FSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 600A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
1
2
