NTE6090
Silicon Dual Power Rectifier
Description:
The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the
Schottky Barrier principle with a platinum barrier metal.
Features:
D
Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range
D
Guarding for Stress Protection
D
Low Forward Voltage
D
+150擄C Operating Junction Temperature
D
Guaranteed Reverse Avalanche
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Working Peak Reverse Voltage, V
RWM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
DC Blocking Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Average Rectified Forward Current (V
R
= 45V, T
C
= +105擄C), I
F(AV)
Per Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak Repetitive Forward Current, Per Diode (V
R
= 45V, Square Wave, 20kHz), I
FRM
. . . . . . . . 30A
Non鈥揜epetitive Peak Surge Current, I
FSM
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) . . . . . . . . . . 200A
Peak Repetitive Reverse Current, Per Diode (2碌s, 1kHz), I
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Peak Surge Junction Temperature (Forward Current Applied), T
J(pk)
. . . . . . . . . . . . . . . . . . . +175擄C
Voltage Rate of Change (V
R
= 45V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/碌s
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40擄C/W
Electrical Characteristics (Per Diode):
(Note 1)
Parameter
Instantaneous Forward Voltage
Symbol
v
F
Test Conditions
i
F
= 20A, T
C
= +125擄C
i
F
= 30A, T
C
= +125擄C
i
F
= 30A, T
C
= +25擄C
Instantaneous Reverse Current
i
R
V
R
= 45V, T
C
= +125擄C
V
R
= 45V, T
C
= +25擄C
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max
0.60
0.72
0.76
100
1
Unit
V
V
V
mA
mA
Note 1. Pulse Test: Pulse Width = 300碌s, Duty Cycle
next
NTE6090 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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