NTE6080
Silicon Schottky Barrier Rectifier
Description:
The NTE6080 is a silicon switchmode power rectifier using the Schottky Barrier principle with a platinum
barrier metal.
Features:
D
Guard鈥揜ing for Stress Protection
D
Low Forward Voltage
D
+150擄C Operating Junction Temperature
D
Guaranteed Reverse Avalanche
D
Low Power Loss/High Efficiency
D
High Surge Capacity
D
Low Stored Charge Majority Carrier Conduction
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Working Peak Reverse Voltage, V
RWM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
DC Blocking Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Average Rectified Forward Current (V
R
= 60V, T
C
= +133擄C), I
F(AV)
. . . . . . . . . . . . . . . . . . . . . . . 10A
Peak Repetitive Forward Current (V
R
= 60V, Square Wave, 20kHz, T
C
= +133擄C), I
FRM
. . . . . 20A
Non鈥揜epetitive Peak Surge Current, I
FSM
(Surge applied at rated load conditions halfwave, single phase, 60Hz) . . . . . . . . . . . . . 150A
Peak Repetitive Reverse Surge Current (2.0碌s, 1.0kHz), I
RRM
. . . . . . . . . . . . . . . . . . . . . . . . 500mA
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Voltage Rate of Change (V
R
= 60V), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/碌s
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0擄/W
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . 60擄/W
1
2
