NTE601
Silicon Varistor
Temperature Compensating Diode
Features:
D
High reliability planar chip and glass sealing
D
Low I
R
D
Large P
D
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Maximum Forward Current, I
FM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Reverse Current
Forward Voltage
Symbol
I
R
V
F
鈥撯垎V
F
/鈭員
Test Conditions
V
R
= 6V
I
F
= 1.5mA
I
F
= 50mA
Forward Voltage Change with Respect to Temperature
I
F
= 1.5mA
Min
鈥?/div>
0.59
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
2.0
Max
10
0.64
1.1
鈥?/div>
Unit
碌A(chǔ)
V
V
mV/擄C
.099 (2.51) Max
.099 (2.51) Max
.080 (2.03)
Dia Max
.022 (0.56) Max
.500 (12.7)
Min
.118
(3.0)
Max
.500 (12.7)
Min
Color Band Denotes Cathode
NTE601 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
NTE601相關(guān)型號(hào)PDF文件下載
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