NTE571
General Purpose Silicon Rectifier
Fast Switching, Soft Recovery
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, V
RRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Continuous Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V
Average Forward Rectified Current, I
F(AV)
.394鈥?(10mm) lead length, T
tp
= +55擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.9A
T
A
= +65擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Repetitive Peak Forward Current, I
FRM
T
tp
= +55擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33A
T
A
= +65擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A
Non鈥揜epetitive Peak Forward Current, I
FSM
t = 10ms, half sine鈥搘ave, T
J
= +175擄C prior to surge, V
R
= 1000V . . . . . . . . . . . . . . . . . . 65A
Non鈥揜epetitive Peak Reverse Avalanche Energy, E
RSM
I
R
= 400mA, T
J
= +175擄C prior to surge; with inductive load off . . . . . . . . . . . . . . . . . . . 10mJ
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Thermal Resistance, Junction鈥搕o鈥搕ie point (10mm lead lenght), R
thj0tp
. . . . . . . . . . . . . . . . . 25K/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thja
Mounted on 1.5mm thick PC Board, Cu鈥搕hickness > 40碌m . . . . . . . . . . . . . . . . . . . . . 75K/W
Electrical Characteristics:
(T
J
= +25擄C unless otherwise specified)
Parameter
Forward Voltage Drop
Reverse Avalanche Breakdown Voltage
Reverse Current
Reverse Recovery Time
Symbol
V
F
V
(BR)R
I
R
t
rr
Test Conditions
I
F
= 3A,
T
J
= +175擄C, Note 1
I
F
= 3A, Note 1
I
R
= 0.1mA
V
R
= 1000V
V
R
= 1000V, T
J
= +165擄C
when switched from
I
F
= 0.5A to I
R
= 1A
measured at I
R
= 0.25A
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Max Unit
1.28
1.78
1100
5
150
150
V
V
V
碌A(chǔ)
碌A(chǔ)
ns
Note 1. Measured under pulse conditions to avoid excessive dissipation.
1.000
(25.4)
Min
.165 (4.2) Max
.053 (1.35) Dia Max
.169 (4.3) Max
Color Band Denotes Cathode
NTE571相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
BIPOLAR TRANSISTOR, NPN, 400V, TO-3; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, NPN, 150V, TO-220; Transistor Polarity:N...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -150V, TO-220; Transistor Polarity:...
NTE Electronics
-
英文版
Standard Recovery Rectifier; Repetitive Reverse Voltage Max,...
NTE Electronics
-
英文版
POWER RECTIFIER DIODE; Diode Type:Standard Recovery; Repetit...
NTE Electronics
-
英文版
Small Signal Diode; Forward Current, If(AV):150mA; Repetitiv...
NTE Electronics
-
英文版
FAST RECOVERY DIODE, 0.5A 2KV AXIAL; Diode Type:Fast Recover...
NTE Electronics
-
英文版
STANDARD DIODE, 1A, 600V, DO-41; Diode Type:Fast Recovery; R...
NTE Electronics
-
英文版
STANDARD DIODE, 1A, 1.5KV, DO-41; Diode Type:Standard Recove...
NTE Electronics
-
英文版
Silicon Rectifier Fast Switching, Soft Recovery
NTE [NTE E...
-
英文版
Silicon Controlled Avalanche Diode
NTE
-
英文版
Silicon Controlled Avalanche Diode
NTE [NTE E...
-
英文版
General Purpose Silicon Rectifier Fast Switching, Soft Recov...
NTE
-
英文版
General Purpose Silicon Rectifier Fast Switching, Soft Recov...
NTE [NTE E...
-
英文版
Silicon Rectifier General Purpose, Fast Recovery
NTE
-
英文版
Silicon Rectifier General Purpose, Fast Recovery
NTE [NTE E...
-
英文版
Schottky Barrier Rectifier
NTE [NTE E...
-
英文版
General Purpose Silicon Rectifier Fast Recovery
NTE [NTE E...
-
英文版
General Purpose Silicon Rectifier Fast Recovery
NTE [NTE E...
-
英文版
5.0 Ampere Super Fast Rectifier
NTE [NTE E...
1
