NTE56030 & NTE56031
TRIAC, 40 Amp
Isolated Tab
Description:
The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab
designed to be driven directly with IC and MOS devices.
Absolute Maximum Ratings:
Peak Repetitive Off鈥揝tate Voltage (Gate Open, T
J
= +110擄C, Note 1), V
DRM
NTE56030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On鈥揝tate Current (T
C
= +80擄C, 360擄 Conduction Angle), I
T
(RMS) . . . . . . . . . . . . . . . . . . . 40A
Peak Non鈥揜epetitive Surge Current (One Cycle, at 50Hz or 60Hz), I
TSM
. . . . . . . . . . . . . . . . . 400A
Peak Gate鈥揟rigger Current (t = 3碌s), I
GTM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate鈥揚(yáng)ower Dissipation (I
GT
鈮?/div>
I
GTM
), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Average Gate鈥揚(yáng)ower Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +110擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Typical Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC(DC)
. . . . . . . . . . . . . . . . . . . . . . . . . . 0.95擄C/W
Note 1. All values apply in either direction.
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Peak Off鈥揝tate Current
Gate Trigger Current
Quadrant I, II, III
Quadrant IV
Gate Trigger Voltage
Gate Non鈥揟rigger Voltage
Holding Current
Peak On鈥揝tate Voltage
V
GT
V
GD
I
H
V
TM
Symbol
I
DRM
I
GT
Test Conditions
T
J
= +110擄C, V
D
= V
DRM
, Gate Open, Note
1
V
D
= 12V, R
L
= 30鈩?/div>
T2 (+) G (+), T2 (鈥? G (鈥? Quads I and III
T2 (+) G (鈥?, T2 (鈥? G (+) Quads II and IV
V
D
= 12V, R
L
= 30鈩?/div>
V
D
= V
DRM
, T
J
= +110擄C, R
L
= 3k,
Pulse Duration > 20碌s, Note 1
Gate Open, Note 1
I
T
= 40A, Note 1
Min
鈥?/div>
Typ
鈥?/div>
Max
0.5
Unit
mA
鈥?/div>
鈥?/div>
鈥?/div>
0.2
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
150
2.5
鈥?/div>
100
1.8
mA
mA
V
V
mA
V
Note 1. All values apply in either direction.
NTE56030 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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