NTE56019 and NTE56020
TRIAC, 25 Amp
Description:
The NTE56019 and NTE56020 are 25 Amp TRIACs with a repetitive peak blocking of 200V and
400V respectively. These devices may be gate triggered from a blocking to conduction state for
either polarity of applied voltage and are designed for AC switching and phase control applications
such as speed and temperature modulation controls, lighting controls, and static switching relays.
The triggering signal is normally applied between the Gate and MT
1
.
Features:
D
Electrically Isolated TO220 Type Package
D
Glass鈥揚assivated Junctions
D
Surge Capability: Up to 400A
Absolute Maximum Ratings:
(T
A
= +25擄C, 60Hz, with a resistive load unless otherwise specified)
Repetitive Peak Blocking Voltage (Note 1), V
DRM
NTE56019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE56020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
RMS On鈥揝tate Current (Conduction Angle of 360擄, T
C
= 鈥?0擄 to +125擄C), I
T(RMS)
. . . . . . . . . . 25A
Non鈥揜epetitive On鈥揝tate Current (One Cycle), I
TSM
60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A
50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208A
Fusing Current (t = 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259A
2
s
Peak Gate Current (Pulse Width
鈮?/div>
10碌s Max), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Dissipation (Pulse Width
鈮?/div>
10碌s, I
GT
鈮?/div>
I
GTM
), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Gate Dissipation, P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5K/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1/16鈥?from case, 10sec max), T
L
. . . . . . . . . . . . . . . . . +230擄C
Note 1. For either polarity of MT
2
1
terminal.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Off鈥揝tate Leakage Current
Symbol
I
DRM
V
TM
Test Conditions
V
D
= V
DRM
, T
J
= +25擄C, Note 1
V
D
= V
DRM
, T
J
= +125擄C, Note 1
On鈥揝tate Voltage
I
T(RMS)
= 25A, Note 1
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
Max
0.1
3
1.8
Unit
mA
mA
V
Note 1. For either polarity of MT
2
with reference to MT
1
terminal.
NTE56019 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細信息
1
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