NTE56004 thru NTE56010
TRIAC, 15 Amp
The NTE56004 thru NTE56010 series of TRIACs are designed primarily for full鈥搘ave AC control ap-
plications, such as solid鈥搒tate relays, motor controls, heating controls and power supplies; or wherev-
er full鈥搘ave silicon gate controlled solid鈥搒tate devices are needed. TRIAC type thyristors switch from
a blocking to a conducting state for either polarity of applied anode voltage with positive or negative
gate triggering.
Features:
D
Blocking Voltage from 200 to 800 Volts
D
All Diffused and Glass Passivated Junctions
D
Small, Rugged, TO220 package for Low Thermal Resistance, High Heat Dissipation and Durability
D
Gate Triggering specified in Four Quadrants
Absolute Maximum Ratings:
Peak Repetitive Off鈥揝tate Voltage, (T
J
= 鈥?0擄 to 125擄C), V
DRM
NTE56004 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE56006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE56008 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Peak Gate Voltage, V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
On鈥揝tate Current RMS (Full Cycle Sine Wave 50 to 60Hz,T
C
= +90擄C), I
T(RMS)
. . . . . . . . . . . 15A
Circuit Fusing (t = 8.3ms) I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93A
2
s
Peak Surge Current (One Full Cycle, 60Hz, T
C
= +80擄C), I
TSM
Preceded and followed by rated current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150A
Peak Gate Power (T
C
= +80擄C, Pulse Width = 2碌s), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power (T
C
= +80擄C, t = 8.3ms), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Peak Gate Current, I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2擄C/W
1
2
