NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Peak Repetitive Off鈥揝tate Voltage (T
J
= 鈥?0擄 to +125擄C, R
GK
= 1k鈩?, V
DRM
, V
RRM
NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On鈥揝tate Current (All Conduction Angles, T
C
= +85擄C), I
T(RMS)
. . . . . . . . . . . . . . . . . . . . . 12A
Average On鈥揝tate Current (Half Cycle, 180擄 Conduction Angle, T
C
= +85擄C), I
T(AV)
. . . . . . . . 7.6A
Non鈥揜epetitive On鈥揝tate Current (Half Cycle, 60Hz), I
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A
Non鈥揜epetitive On鈥揝tate Current (Half Cycle, 50Hz), I
TSM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Circuit Fusing Considerations (Half Cycle, t = 10ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A
2
s
Peak Gate Current (10碌s Max), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate Dissipation (10碌s Max), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Dissipation (20ms Max), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
L
. . . . . . . . . . . . . . . +250擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Off鈥揝tate Leakage Current
On鈥揝tate Voltage
On鈥揝tate Threshold Voltage
On鈥揝tate Slope Resistance
Gate鈥揟rigger Current
Gate鈥揟rigger Voltage
Symbol
I
DRM
,
I
RRM
V
T
V
T(TO)
r
T
I
GT
V
GT
Test Conditions
V
DRM
+ V
RRM
, R
GK
= 1k鈩?/div>
I
T
= 24A, T
J
= +25擄C
T
J
= +125擄C
T
J
= +125擄C
V
D
= 7V
V
D
= 7V
T
J
= +125擄C
T
J
= +25擄C
Min Typ Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.5
5.0
1.8
1.0
36
10
2.0
Unit
mA
碌A(chǔ)
V
V
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