NTE5460
Silicon Controlled Rectifier (SCR)
Description:
The NTE5460 is designed primarily for half鈥搘ave AC control applications such as motor controls,
heating controls, and power supply crowbar circuits.
Features:
D
Glass Passivated Junction with Center Gate Fire for Greater Parameter Uniformity and Stability
D
Small, Rugged Construction for Low Thermal Resistance, High Heat Dissipation, and Durability
D
300A Surge Current Capability
D
Insulated Package Simplifies Mounting
Absolute Maximum Ratings:
Repetitive Peak Off鈥揝tate Voltage (T
J
= 鈥?0擄 to +125擄C, Note 1), V
DRM
. . . . . . . . . . . . . . . . . . 800V
Repetitive Peak Reverse Voltage (T
J
= 鈥?0擄 to +125擄C, Note 1), V
RRM
. . . . . . . . . . . . . . . . . . . 800V
On鈥揝tate RMS Current (T
C
= +70擄C, Full Cycle Sine Wave 50 to 60Hz, Note 2), I
T(RMS)
. . . . . 25A
Peak Non鈥揜epetitive Surge Current, I
TSM
(One Full Cycle, 60Hz, T
C
= +70擄C, Preceeded and Followed by Rated Current) . . . . 300A
Circuit Fusing (t = 8.3ms), I
2
t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375A
2
s
Peak Gate Power (T
C
= +70擄C, Pulse Width = 10碌s), P
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power (T
C
= +70擄C, t = 8.3ms), P
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current (T
C
= +70擄C, Pulse Width = 10碌s), I
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
RMS Isolation Voltage (T
A
= +25擄C, Relative Humidity
鈮?/div>
20%), V
(ISO)
. . . . . . . . . . . . . . . . . . . 1500V
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0擄 to +125擄C
Maximum Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5擄C/W
Typical Thermal Resistance, Case鈥搕o鈥揝ink, R
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2擄C/W
Maximum Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . 60擄C/W
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant
current source for blocking capability such that the voltage applied exceeds the rated block-
ing voltage.
Note 2. The case temperature reference point for all T
C
measurements is a point on the center lead
of the package as close as possible to the plastic body.
1
2
