NTE492
MOSFET
N鈥揅h, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵20V
Drain Current, I
D
Continuous (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. The Power Dissipation of the package may result in a lower continuous drain current.
Note 2. Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Zero鈥揋ate鈥揤oltage Drain Current
Drain鈥揝ource Breakdown Voltage
Gate Reverse Current
ON Characteristics
(Note 2)
Gate Threshold Voltage
Static Drain鈥揝ource ON Resist-
ance
Small鈥揝ignal Characteristics
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Forward Transconductance
C
iss
C
rss
C
oss
g
fs
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, V
GS
= 0, f = 1MHz
V
DS
= 25V, I
D
= 250mA
鈥?/div>
鈥?/div>
鈥?/div>
60
6.0
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
pF
pF
pF
mmhos
V
GS(Th)
r
DS(on)
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 100mA
V
GS
= 10V, I
D
= 250mA
1.0
鈥?/div>
鈥?/div>
鈥?/div>
4.5
4.8
3.0
6.0
6.4
V
鈩?/div>
鈩?/div>
I
DSS
I
GSS
V
DS
= 130V, V
GS
= 0
V
GS
= 15V, V
DS
= 0
鈥?/div>
200
鈥?/div>
鈥?/div>
鈥?/div>
30
鈥?/div>
nA
V
nA
V
(BR)DSX
V
GS
= 0, I
D
= 100碌A(chǔ)
Symbol
Test Conditions
Min Typ Max
Unit
0.01 10.0
200 400
Note 2. Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
NTE492 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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