NTE491
MOSFET
N鈥揅h, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Drain鈥揋ate Voltage (R
GS
= 1M鈩?, V
DGR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
鹵40V
Drain Current, I
D
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
th (JA)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 312.5擄C/W
Maximum Lead Temperature (During Soldering, 1/16鈥?from case, 10sec), T
L
. . . . . . . . . . . . +300擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Zero鈥揋ate鈥揤oltage Drain Current
I
DSS
V
(BR)DSS
I
GSSF
V
GS(Th)
r
DS(on)
V
DS(on)
I
d(on)
g
fs
V
DS
= 48V, V
GS
= 0
V
DS
= 48V, V
GS
= 0, T
J
= +125擄C
Drain鈥揝ource Breakdown Voltage
Gate鈥揃ody Leakage Current, Forward
ON Characteristics
(Note 1)
Gate Threshold Voltage
Static Drain鈥揝ource ON Resistance
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 75mA
Drain鈥揝ource ON鈥揤oltage
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 75mA
ON鈥揝tate Drain Current
Forward Transconductance
V
GS
= 4.5V, V
DS
= 10V
V
DS
= 10V, I
D
= 200mA
0.8
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
75
100
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0
5.0
6.0
2.5
0.45
鈥?/div>
鈥?/div>
V
鈩?/div>
鈩?/div>
V
V
mA
碌mhos
V
GS
= 0, I
D
= 10碌A(chǔ)
V
GSF
= 15V, V
DS
= 0
鈥?/div>
鈥?/div>
60
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.0
鈥?/div>
鈥?0
碌A(chǔ)
mA
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
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