NTE489
Silicon P鈥揅hannel JFET Transistor
General Purpose AF Amplifier
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Gate鈥揇rain Voltage (Note 1), V
GD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate鈥揝ource Voltage (Note 1), V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.27mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +135擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Lead Temperature (During Soldering, 1/16鈥?from case for 10sec), T
L
. . . . . . . . . . . . . . . . . . . +300擄C
Note 1. Geometry is symmetrical. Units may be operated with source and drain leads interchanged.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Static Characteristics
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
Gate鈥揝ource Cutoff Voltage
Gate Current
Saturation Drain Current
Dynamic Characteristics
Common鈥揝ource Forward
Transconductance
Common鈥揝ource Output Conductance
Common鈥揝ource Input Capacitance
Common鈥揝ource Reverse Transfer
Capaticance
Equivalent Short鈥揅ircuit Input Noise
Voltage
g
fs
g
os
C
iss
C
rss
e
n
V
DS
= 鈥?5V, V
GS
= 0, f = 1kHz,
Note 3
V
DS
= 鈥?5V, V
GS
= 0, f = 1kHz
V
DS
= 鈥?5V, V
GS
= 0, f = 1MHz
V
DS
= 鈥?5V, V
GS
= 0, f = 1MHz
V
DS
= 鈥?0V, I
D
= 鈥?mA, f = 1kHz
6000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15000
碌mho
200
鈥?/div>
鈥?/div>
鈥?/div>
碌mho
pF
pF
nV
pHz
V
(BR)GSS
I
G
= 1碌A(chǔ), V
DS
= 0
I
GSS
V
GS(off)
I
G
I
DSS
V
GS
= 20V, V
DS
= 0, Note 2
I
D
= 鈥?nA, V
DS
= 鈥?5V
I
D
= 鈥?mA, V
DG
= 鈥?5V, Note 2
V
DS
= 鈥?5V, V
GS
= 0
30
鈥?/div>
0.5
鈥?/div>
鈥?
鈥?/div>
鈥?/div>
鈥?/div>
15
鈥?/div>
鈥?/div>
200
2.0
鈥?/div>
鈥?5
V
pA
V
pA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
鈥?/div>
32
4
6
Note 2. Approximately doubles for every 10擄C increase in T
A
.
Note 3. Pulse test duration = 2ms.
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