The NTE488 is a silicon NPN epitaxial planar type transistor designed for industrial use RF power
Amplifiers on VHF band mobile radio applications.
鈮?/div>
10.7dB @ V
CC
= 13.5V, P
O
= 3.5W, f = 175MHz
D
TO39 Metal Sealed Package for High Reliability
D
Emitter Electrode is Connected Electrically to the Case
Application:
1 to 3 Watt Power Amplifiers in VHF Band Mobile Radio Applications.
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150擄C/W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Emitter鈥揃ase Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Symbol
V
(BR)EBO
V
(BR)CBO
I
C
= 10mA, I
E
= 0
V
(BR)CEO
I
C
= 50A, R
BE
=
鈭?/div>
Test Conditions
Min
4
35
17
Typ
鈥?/div>
NTE488 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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