NTE486
Silicon NPN Transistor
RF High Frequency Amplifier
Description:
The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use
in 12.5V UHF large鈥搒ignal applications required in industrial equipment.
Features:
D
Specified 12.5V, 470MHz Characteristics:
Output Power = 0.75W
Minimum Gain = 8dB
Effeciency = 50%
D
S Parameter Data from 100MHz to 1GHz
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
ON Characteristics
DC Current Gain
Collector鈥揈mitter Saturation Voltage
h
FE
V
CE(sat)
V
CE
= 10V, I
C
= 50mA
I
C
= 50mA, I
B
= 5mA
20
鈥?/div>
60
鈥?/div>
150
0.5
V
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
C
= 5mA, I
B
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 15V, I
B
= 0
20
35
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
V
V
V
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max Unit
NTE486 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
1
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