NTE47
Silicon NPN Transistor
High Gain, Low Noise Amp
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient (Note 1), R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . 200擄C/W
Note 1 R
thJA
is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise noted)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Colletor鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
ON Characteristics
(Note 2)
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 10碌A
V
CE
= 5V, I
C
= 100碌A
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
Collector鈥揈mitter Saturation Voltage
V
CE(sat)
V
BE(on)
I
C
= 10mA, I
B
= 0.5mA
I
C
= 50mA, I
B
= 0.5mA
Base鈥揈mitter ON Voltage
V
CE
= 5V, I
C
= 1mA
400
500
500
500
鈥?/div>
鈥?/div>
鈥?/div>
580
850
1100
1150
鈥?/div>
0.08
0.6
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.2
0.3
0.7
V
V
V
V
(BR)CEO
I
C
= 10mA, I
B
= 0, Note 2
V
(BR)CBO
I
C
= 100碌A, I
E
= 0
V
(BR)EBO
I
E
= 10碌A, I
C
= 0
I
CBO
V
CB
= 30V, I
E
= 0
45
45
6.5
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
鈥?/div>
鈥?/div>
鈥?/div>
50
V
V
V
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 2 Pulse test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
NTE47 產品屬性
NTE
置換半導體
詳細信息
1
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