NTE478
Silicon NPN Transistor
RF Power Output, P
O
= 100W @ 175MHz
Description:
The NTE478 is a 12.5 Volt epitaxial silicon NPN planar transistor designed primarily for VHF commu-
nications. This device utilizes diffused emitter resistors to achieve infinite VSWR under operating
conditions, and is internally input matched to optimize power gain and efficiency over the band.
Features:
D
Designed for VHF Military and Commercial Equipment
D
100W Min with Greater than 6.0dB Gain
D
Withstands Infinite VSWR under Operating Conditions
D
Low Intermodulation Distortion (鈥?2dB)
D
Diffused Emitter Resistors
Absolute Maximum Ratings:
(T
C
= +25擄C unless othrwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (At +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65擄C/W
Electrical Characteristic:
(T
C
= +25擄C unless otherwise specified)
Parameter
Static
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
I
C
= 100mA, I
B
= 0, Note 1
V
(BR)CES
I
C
= 100mA, V
BE
= 0, Note 1
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
DC Current Gain
V
(BR)EBO
I
E
= 10mA, i
C
= 0
I
CBO
h
FE
V
CB
= 12V, I
E
V
CE
= 6V, I
C
= 5A
18
36
4
鈥?/div>
10
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
鈥?/div>
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulsed through 25mH indicator.
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