The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF
band mobile radio applications.
鈮?/div>
8.2dB @ V
CC
= 13.5V; V
O
= 40W; t = 175MHz
D
Emitter ballasted construction and gold metallization for high reliability, and good performances
D
Low thermal resistance ceramic package with flange
D
Ability of withstanding more than 20:1 load VSWR when operated at V
CC
= 15.2V,
P
O
= 40W, f = 175MHz, T
C
= 25擄C
Applications:
30 to 35 watts output power amplifiers in VHF band mobile radio applications.
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector鈥揈mitter Voltage (R
BE
=
鈭?,
V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Collector Dissipation, P
C
T
A
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5W
T
C
= +25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W
Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33.3擄C/W
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Emitter鈥揃ase Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Symbol
Test Conditions
Min
3
35
17
Typ
鈥?/div>
鈥?/div>
鈥?/div>
Max Unit
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
V
(BR)EBO
I
E
= 10mA, I
O
= 0
V
(BR)CBO
I
O
= 10mA, I
E
= 0
V
(BR)CEO
I
O
= 0.1A, R
BE
=
鈭?/div>
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