NTE476
Silicon NPN Transistor
RF Power Output
Description:
The NTE476 is a silicon epitaxial NPN鈥損lanar transistor which employs a multi鈥揺mitter electrode de-
sign. This feature together with a heavily diffused base matrix located between the individual emitters
result in high RF current handling capability, high power gain, low base resistance and low output ca-
pacitance. This device is intended for use as a Class A, B or C amplifier and in oscillator and frequency
multiplier circuits.
Features:
D
Designed for VHF mobile and marine transmitters
D
High efficiency at maximum stability
D
Improved metallization to achieve extreme ruggedness
Absolute Maximum Ratings:
(T
A
= +25擄C except where specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, I
C
max . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Total Dissipation at 25擄C Stud, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23.2W
Thermal Resistance, Junction鈥搕o鈥揝tud, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.54擄C/W
Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to 200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to 200擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
Dynamic Characteristics
Current Gain 鈥?Bandwidth Product
Output Capacitance
Functional Tests
Power Output
Power Gain (Class C)
Collector Efficiency (Class C)
P
OUT
P
g
畏
V
CE
= 13.6V, f = 175MHz
12
4.77
80
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
W
dB
%
f
T
C
ob
I
C
= 100mA, V
CE
= 13.6V
V
CB
= 13.6V, I
E
= 0, f = 100kHz
鈥?/div>
鈥?/div>
350
鈥?/div>
鈥?/div>
45
MHz
pF
V
(BR)CEO
I
C
= 200mA, I
B
= 0, Note 1
V
(BR)CBO
I
C
= 500碌A(chǔ), I
E
= 0
V
(BR)EBO
I
E
= 2mA, I
C
= 0
I
CBO
V
CB
= 15V, I
E
= 0
18
36
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.25
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit
Note 1. Pulsed thru a 25mH inductor.
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