NTE475
Silicon NPN Transistor
RF Power Output
Description:
The NTE475 is an NPN silicon annular RF power transistor, optimized for large鈥搒cale power鈥揳mplifier
and driver applications to 300MHz.
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector鈥揃ase Voltage,V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Power Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11.6W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66.3mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Dynamic Characteristics
Current Gain 鈥?Bandwidth Product
Output Capacitance
Functional Tests
Power Input
Common鈥揈mitter Amplifier Power Gain
Collector Efficiency
P
in
G
pe
畏
R
L
= 50鈩? P
out
= 12W, f = 175MHz
鈥?/div>
4.77
80
鈥?/div>
5.0
鈥?/div>
4.0
鈥?/div>
鈥?/div>
W
dB
%
f
T
C
ob
I
C
= 100mA, V
CE
= 13.6V, f = 100MHz
V
CB
= 13.6V, I
E
= 0, f = 100kHz
鈥?/div>
鈥?/div>
350
鈥?/div>
MHz
pF
V
CEO(sus)
I
C
= 200mA, Note 1
V
(BR)CEO
I
C
= 0.25mA, I
E
= 0
V
(BR)EBO
I
E
= 1mA, I
C
= 0
18
36
4
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
V
Symbol
Test Conditions
Min
Typ
Max Unit
12.5 20.0
Note 1. Pulsed thru a 25mH inductor.
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