NTE473
Silicon NPN Transistor
RF Power Driver
Description:
The NTE473 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator
applications in military and industrial equipment. Suitable for use as output, driver or predriver stages
in VHF equipment.
Features:
D
Specified 175MHz, 28V Characteristics:
Output Power: 2.5W
Minimum Gain: 10dB
Efficiency: 50%
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector鈥揃ase Voltage, V
CB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter鈥揃ase Voltage, V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Note 1
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
I
CEO
I
CEX
Emitter Cutoff Current
I
EBO
V
CE
= 30V, I
B
= 0
V
CE
= 30V, V
BE(off)
= 1.5V, T
C
= +200擄C
V
CE
= 65V, V
BE(off)
= 1.5V
V
BE
= 4V, I
C
= 0
40
4
鈥?/div>
鈥?/div>
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鈥?/div>
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0.1
5.0
1.0
0.1
V
V
mA
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulsed thru a 25mH inductor.
NTE473 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
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