NTE472
Silicon NPN Transistor
RF Power Output
P
O
= 1.8W @ 175MHz
Description:
The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator ap-
plications in military, mobile marine and citizens band equipment. Suitable for use as output driver
or pre鈥揹river stages in VHF and UHF equipment.
Features:
D
Specified 12.5 Volt, 175MHz Characteristics:
Output Power = 1.75 Watts
Minimum Gain = 11.5dB
Efficiency = 50%
D
Characterized through 225MHz
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.33A
Total Device Dissipation (T
C
= +75擄C , Note 1), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5W
Derate Above 75擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as a class B or C RF amplifier.
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
I
C
= 25mA, I
B
= 0
V
(BR)CES
I
C
= 25mA, V
BE
= 0
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)EBO
I
C
= 0.5mA, I
C
= 0
I
CEO
V
CE
= 10V, I
B
= 0
16
36
3.5
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鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.3
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max Unit
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