NTE471
Silicon NPN Transistor
RF Power Output
P
O
= 100W @ 30MHz
Description:
The NTE471 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communica-
tions. This device utilizes state鈥搊f鈥搕he鈥揳rt diffused emitter ballasting for improved ruggedness and
reliability.
Features:
D
Better than 15dB Gain at 30MHz and 100W (CW/PEP)
D
Diffused Emitter Ballasting
D
Withstands Infinite Mismatch at Operating Conditions
D
Low Inductance Stripline Package
D
Frequency = 30MHz
D
Power Out = 100 Watts
D
Voltage = 28 Volts
D
Power Gain = 15dB
Absolute Maximum Ratings:
(T
C
= +25擄C unless otherweise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Maximum Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total Device Dissipation (T
C
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W
Maximum Junction Temperatures, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65擄C/W
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