NTE470
Silicon NPN Transistor
RF Power Output
Description:
The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application
as a high鈥損ower linear amplifier from 2.0 to 30MHz.
Features:
D
Specified 12.5V, 30MHz Characteristics:
Output Power = 100W (PEP)
Minimum Gain = 10dB
Efficiency
= 40%
D
Intermodulation Distortion @ 100W (PEP): IMD = 鈥?0dB Min
D
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Withstand Current (10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.66W/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown Voltage
V
(BR)CEO
I
C
= 50mA, I
B
= 0
V
(BR)CES
I
C
= 200mA, V
BE
= 0
Collector鈥揃ase Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Current
V
(BR)CBO
I
C
= 200mA, I
E
= 0
V
(BR)EBO
I
E
= 10mA, I
C
= 0
I
CES
V
CE
= 16V, V
BE
= 0, T
C
= +25擄C
20
45
45
3
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10
V
V
V
V
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
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