NTE46
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
Preamp, Driver
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/擄C
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction to Case, R
螛JC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3擄C/W
Thermal Resistance, Junction to Ambient, R
螛JA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Breakdown
V
(BR)CES
I
C
= 100碌A(chǔ), V
BE
= 0
Voltage
Collector鈥揃ase Breakdown Voltage V
(BR)CBO
I
C
= 100碌A(chǔ), I
E
= 0
Emitter鈥揃ase Breakdown Voltage
Collector Cutoff Voltage
Emitter Cutoff Current
V
(BR)EBO
I
E
= 10碌A(chǔ), I
C
= 0
I
CBO
I
CES
I
EBO
V
CB
= 80V, I
E
= 0
V
CE
= 80V, V
BE
= 0
V
BE
= 10V, I
C
= 0
100
100
12
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100
500
100
V
V
V
nA
nA
nA
Symbol
Test Conditions
Min
Typ
Max
Unit
NTE46 產(chǎn)品屬性
NTE
置換半導體
否
1
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