NTE467
Silicon N鈥揅hannel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Reverse Gate鈥揝ource Voltage, V
GSR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Forward Gate Current, I
G(f)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.82mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
G
= 10碌A, V
DS
= 0
I
GSS
I
D(off)
V
GS
= 鈥?5V, V
DS
= 0
V
GS
= 鈥?5V, V
DS
= 0, T
A
= +100擄C
Drain Cutoff Current
V
DS
= 15V, V
GS
= 鈥?2V
V
DS
= 15V, V
GS
= 鈥?2V, T
A
= +100擄C
ON Characteristics
Zero鈥揋ate Voltage Drain Current
Drain鈥揝ource ON鈥揤oltage
Static Drain鈥揝ource ON Resistance
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn鈥揙n Delay Time
Rise Time
Turn鈥揙ff Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10V, V
GS(on)
= 0,
V
GS(off)
= 10V, I
D(on)
= 12mA,
R
G
= 50鈩?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
4
5
5
10
ns
ns
ns
ns
I
DSS
V
DS(on)
r
DS
(on)
C
iss
C
rss
V
DS
= 20V, V
GS
= 0, Note 1
I
D
= 12mA, V
GS
= 0
I
D
= 1mA, V
GS
= 0
V
GS
= 鈥?2V, V
DS
= 0, f = 1MHz
V
GS
= 鈥?2V, V
DS
= 0, f = 1MHz
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.5
30
10
4
mA
V
30
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
1.0
1.0
1.0
V
nA
碌A
nA
碌A
Symbol
Test Conditions
Min
Typ
Max
Unit
鈩?/div>
pF
pF
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
NTE467 產品屬性
NTE
置換半導體
否
1
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