NTE466
Silicon N鈥揅hannel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Reverse Gate鈥揝ource Voltage, V
GSR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0V
Forward Gate Current, I
G(f)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
G
= 1A, V
DS
= 0
I
GSS
V
GS(off)
I
D(off)
V
GS
= 鈥?0V, V
DS
= 0
V
GS
= 鈥?0V, V
DS
= 0, T
A
= +150擄C
Gate鈥揝ource Cutoff Voltage
Drain Cutoff Current
V
DS
= 15V, I
D
= 0.5nA
V
DS
= 15V, V
GS
= 鈥?0V
V
DS
= 15V, V
GS
= 鈥?0V, T
A
= +150擄C
ON Characteristics
Zero鈥揋ate鈥揤oltage Drain Current
Drain鈥揝ource ON鈥揤oltage
Small鈥揝ignal Characteristics
Drain鈥揝ource 鈥淥N鈥?Resistance
Input Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
Turn鈥揙n Delay Time
Rise Time
Turn鈥揙ff Time
t
d(on)
t
r
t
off
V
DD
= 10V, I
D(on)
= 20mA,
V
GS(on)
= 0, V
GS(off)
= 鈥?0V
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6
3
25
ns
ns
ns
r
DS(on)
C
iss
C
rss
V
GS
= 0, I
D
= 0, f = 1kHz
V
DS
= 0, V
GS
= 鈥?0V, f = 1MHz
V
DS
= 0, V
GS
= 鈥?0V, f = 1MHz
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
25
18
0.8
鈩?/div>
pF
pF
I
DSS
V
DS(on)
V
DS
= 15V, V
GS
= 0, Note 1
I
D
= 20mA, V
GS
= 0
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.75
mA
V
鈥?0
鈥?/div>
鈥?/div>
鈥?
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.25
0.5
鈥?0
0.25
0.5
V
nA
碌A(chǔ)
V
nA
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle
鈮?/div>
10%.
Note 2. The I
D(on)
values are nominal; exact values vary slightly with transistor parameters.
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