NTE460
Silicon P鈥揅hannel JFET Transistor
AF Amp
Absolute Maximum Ratings:
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Reverse Gate鈥揝ource Voltage, V
GSR
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.3W
Derate above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7mW/擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
G
= 10碌A(chǔ), V
DS
= 0
I
GSS
V
GS
= 10V, V
DS
= 0
V
GS
= 10V, V
DS
= 0, T
A
= +150擄C
ON Characteristics
Zero鈥揋ate鈥揤oltage Drain Current
Gate鈥揝ource Voltage
Drain鈥揝ource Resistance
Small鈥揝ignal Characteristics
Forward Transfer Admittance
|y
fs
|
|y
os
|
|y
rs
|
|y
is
|
C
iss
NF
V
DS
= 10V, I
D
= 2mA, f = 1kHz, Note 1
V
DS
= 10V, I
D
= 2mA, f = 10MHz, Note 1
Output Admittance
Reverse Transfer Conductance
Input Conductance
Inpu Capacitance
Functional Characteristics
Noise Figure
V
DS
= 鈥?V, I
D
= 1mA, R
g
= 1M鈩? f = 1kHz
鈥?/div>
鈥?/div>
3.0
dB
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 10V, I
D
= 2mA, f = 1kHz
V
DS
= 10V, V
GS
= 1V, f = 1MHz
1500
1350
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3000
碌mhos
鈥?/div>
40
0.1
0.2
20
碌mhos
碌mhos
碌mhos
碌mhos
pF
I
DSS
V
GS
r
DS
V
DS
= 鈥?0V, V
GS
= 0, Note 1
V
DG
= 鈥?5V, I
D
= 10碌A(chǔ)
I
D
= 100碌A(chǔ), V
GS
= 0
2.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6.0
6.0
800
mA
V
鈩?/div>
20
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
10
V
nA
碌A(chǔ)
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: PulseWidth
鈮?/div>
630ms, Duty Cycle
next
NTE460相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor Darlington, General Purpose Amplifier...
NTE
-
英文版
T-NPN-SI GEN PURP AMP T-NPN,SI GEN PURP AMP NTE Silicon Darl...
NTE Electronics
-
英文版
Silicon NPN Transistor High Gain, Low Noise Amp
NTE
-
英文版
replacement Transistors TO-92 NPN HI-GN AMP
NTE Electronics
-
英文版
Silicon NPN Transistor Darlington, General Purpose Amplifier...
NTE
-
英文版
Darlington Bipolar Transistor; Transistor Polarity:NPN; Coll...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose, High Volt...
NTE
-
英文版
Silicon N-Channel JFET Transistor VHF/UHF Amplifier
NTE
-
英文版
Silicon N-Channel JFET Transistor VHF Amplifier, Mixer
NTE
-
英文版
MOSFET, N-Ch, Dual Gate, TV UHF/RF Amp, Gate Protected
NTE
-
英文版
N-Channel Silicon JFET General Purpose Amp, Switch
NTE
-
英文版
Silicon N-Channel JFET Transistor General Purpose Amp, Switc...
NTE
-
英文版
Transistor; Transistor Type:JFET; Breakdown Voltage, V(br):-...
NTE Electronics
-
英文版
N-Channel Silicon JFET General Purpose, Low Noise, Audio Fre...
NTE
-
英文版
JFET-N-CH GEN PURP AMP JFET-N-CH,GEN PURP AMP NTE Field Effe...
NTE Electronics
-
英文版
N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switc...
NTE
-
英文版
Silicon P-Channel JFET Transistor AF Amp
NTE
-
英文版
Silicon P-Channel JFET Transistor AF Amp
NTE [NTE E...
-
英文版
Silicon Complementary MOSFET Transistors Enhancement Mode fo...
NTE
-
英文版
Silicon Complementary MOSFET Transistors Enhancement Mode fo...
NTE [NTE E...
1
2
