NTE459
N鈥揅hannel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0V
Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/擄C
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
G
= 鈥?碌A(chǔ), V
DS
= 0
I
GSS
V
GS(off)
V
GS
I
DSS
|y
fs
|
V
GS
= 鈥?0V, V
DS
= 0
V
GS
= 鈥?0V, V
DS
= 0, T
A
= +150擄C
Gate鈥揝ource Cutoff Voltage
Gate鈥揝ource Voltage
ON Characteristics
Zero鈥揋ate鈥揤oltage Drain Current
Small鈥揝ignal Characteristics
Forward Transfer Admittance
V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
V
DS
= 15V, V
GS
= 0, f = 100MHz
Output Admittance
Input Capacitance
Reverse Transfer Capacitance
|y
os
|
C
iss
C
rss
V
DS
= 15V, V
GS
= 0, f = 1kHz,
Note 1
V
DS
= 15V, V
GS
= 0, f = 1MHz
V
DS
= 15V, V
GS
= 0, f = 1MHz
3000
3000
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6500
鈥?/div>
20
6
3
碌mho
碌mho
碌mho
pF
pF
V
DS
= 15V, V
GS
= 0, Note 1
2
鈥?/div>
10
mA
I
D
= 0.5nA, V
DS
= 15V
I
D
= 200碌A(chǔ), V
DS
= 15V
鈥?0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?.1
鈥?00
鈥?
鈥?
V
nA
nA
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
鈮?/div>
100ms, Duty Cycle
next
NTE459 產(chǎn)品屬性
NTE
置換半導(dǎo)體
否
JFETs
NTE459相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Silicon NPN Transistor Darlington, General Purpose Amplifier...
NTE
-
英文版
T-NPN-SI GEN PURP AMP T-NPN,SI GEN PURP AMP NTE Silicon Darl...
NTE Electronics
-
英文版
Silicon NPN Transistor High Gain, Low Noise Amp
NTE
-
英文版
replacement Transistors TO-92 NPN HI-GN AMP
NTE Electronics
-
英文版
Silicon NPN Transistor Darlington, General Purpose Amplifier...
NTE
-
英文版
Darlington Bipolar Transistor; Transistor Polarity:NPN; Coll...
NTE Electronics
-
英文版
Silicon Complementary Transistors General Purpose, High Volt...
NTE
-
英文版
Silicon N-Channel JFET Transistor VHF/UHF Amplifier
NTE
-
英文版
Silicon N-Channel JFET Transistor VHF Amplifier, Mixer
NTE
-
英文版
MOSFET, N-Ch, Dual Gate, TV UHF/RF Amp, Gate Protected
NTE
-
英文版
N-Channel Silicon JFET General Purpose Amp, Switch
NTE
-
英文版
Silicon N-Channel JFET Transistor General Purpose Amp, Switc...
NTE
-
英文版
Transistor; Transistor Type:JFET; Breakdown Voltage, V(br):-...
NTE Electronics
-
英文版
N-Channel Silicon JFET General Purpose, Low Noise, Audio Fre...
NTE
-
英文版
JFET-N-CH GEN PURP AMP JFET-N-CH,GEN PURP AMP NTE Field Effe...
NTE Electronics
-
英文版
N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switc...
NTE
-
英文版
Silicon P-Channel JFET Transistor AF Amp
NTE
-
英文版
Silicon P-Channel JFET Transistor AF Amp
NTE [NTE E...
-
英文版
Silicon Complementary MOSFET Transistors Enhancement Mode fo...
NTE
-
英文版
Silicon Complementary MOSFET Transistors Enhancement Mode fo...
NTE [NTE E...
1
2
