NTE458
N鈥揅hannel Silicon JFET
General Purpose, Low Noise, Audio Frequency Amplifier
Features:
D
Very Low Noise
D
Low Gate Current
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Gate鈥揇rain Voltage, V
GDO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0V
Gate鈥揝ource Voltage, V
GSO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?0V
Drain鈥揝ource Voltage (V
DS
= 鈥?V), V
DSX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation, P
T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +125擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Gate Reverse Current
Zero鈥揋ate Voltage Drain Current
Gate鈥揝ource Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Noise Frequency
Symbol
I
GSS
I
DSS
g
fs
C
iss
C
rss
NF
Test Conditions
V
GS
= 鈥?0V, V
DS
= 0
V
DS
= 10V, V
GS
= 0
V
DS
= 10V, I
D
= 0.5mA, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
V
DS
= 10V, V
GS
= 0, R
G
= 1k鈩?
f = 10Hz
V
DS
= 10V, V
GS
= 0, R
G
= 1k鈩?
f = 100Hz
V
DS
= 10V, V
GS
= 0, R
G
= 1k鈩?
f = 1kHz
Noise Voltage
NV
I
D
= 0.5mA, R
G
= 1k鈩?
f = 10Hz to 1kHz (at V
G
= 鈥?dB)
Min
鈥?/div>
0.5
4.0
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
鈥?/div>
3.0
5.2
12
13
2.6
5.0
1.0
0.6
15
Max
鈥?
12
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
3.0
1.5
20
Unit
nA
mA
V
mhos
mhos
pF
pF
dB
dB
dB
mV
V
GS(off)
V
DS
= 10V, I
D
= 10碌A
鈥?.13 鈥?.5 鈥?.5
NTE458 產(chǎn)品屬性
NTE
置換半導體
否
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