NTE452
Silicon N鈥揅hannel JFET Transistor
VHF Amplifier, Mixer
Description:
The NTE452 is a silicon, N鈥揷hannel junction field effect tranistor (JFET) in a TO72 type package de-
signed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
Drain鈥揝ource Voltage, V
DS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain鈥揋ate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Gate鈥揝ource Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +175擄C
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Gate鈥揝ource Breakdown Voltage
Gate Reverse Current
V
(BR)GSS
I
G
= 1碌s, V
DS
= 0
I
GSS
V
GS(off)
V
GS
V
GS(f)
I
DSS
|Y
fs
|
Y
fs(real)
V
GS
= 20V, V
DS
= 0
V
GS
= 20V, V
DS
= 0, T
A
= +150擄C
Gate鈥揝ource Cutoff Voltage
Gate鈥揝ource Voltage
Gate鈥揝ource Forward Voltage
ON Characteristics
(Note 1)
Zero鈥揋ate Voltage Drain Current
Small鈥揝ignal Characteristics
Forward Transfer Admittance
Real Part of Forward Transfer
Admittance
V
DS
= 15V, V
GS
= 0, f = 1kHz, Note 1
V
DS
= 15V, V
GS
= 0, f = 400MHz
4500
4000
鈥?/div>
鈥?/div>
7500
碌mhos
鈥?/div>
碌mhos
V
DS
= 15V, V
GS
= 0
5
鈥?/div>
15
mA
I
D
= 1nA, V
DS
= 15V
I
D
= 0.5mA, V
DS
= 15V
I
G
= 1mA, V
DS
= 0
30
鈥?/div>
鈥?/div>
鈥?/div>
1.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
100
200
6
5.5
1.0
V
pA
pA
V
V
V
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1. Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
next
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