NTE398
Silicon PNP Transistor
TV Vertical Output
(Compl to NTE375)
Absolute Maximum Ratings:
(T
A
= +25擄C unless otherwise specified)
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Dissipation (T
C
= +25擄C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Note 1. Pulse Width
鈮?/div>
10ms, Duty Cycle
鈮?/div>
50%.
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Symbol
I
CBO
I
EBO
h
FE
f
T
Test Conditions
V
CB
= 150V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 10V, I
C
= 400mA, Note 2
V
CE
= 10V, I
C
= 400mA, Note 2
Min
鈥?/div>
鈥?/div>
60
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
5
鈥?/div>
Max
50
50
120
鈥?/div>
1.0
MHz
V
Unit
碌A
碌A
Collector鈥揈mitter Saturation Voltage V
CE(sat)
I
C
= 500A, I
B
= 50mA
Note 2. Pulse Width
鈮?/div>
350碌s, Duty Cycle
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