NTE397
Silicon PNP Transistor
Power Amplifier & High Speed Switch
(Compl to NTE396)
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage V
CEO(sus)
I
C
= 50mA, I
B
= 0, Note 1
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics
DC Current Gain
Small鈥揝ignal Characteristics
Output Capacitance
Input Capacitance
Small鈥揝ignal Current Gain
Real Part of Input Impedance
C
obo
C
ibo
h
fe
Re(h
ie
)
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 5V, I
C
= 0, f = 1MHz
I
C
= 10mA, V
CE
= 10V, f = 1MHz
V
CE
= 10V, I
C
= 5mA, f = 1MHz
鈥?/div>
鈥?/div>
25
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
15
75
鈥?/div>
300
鈩?/div>
pF
pF
h
FE
I
C
= 50mA, V
CE
= 10V
30
鈥?/div>
120
I
CBO
I
EBO
V
CB
= 280V, I
E
= 0
V
EB
= 6V, I
C
= 0
300
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
50
20
V
碌A(chǔ)
碌A(chǔ)
Symbol
Test Conditions
Min Typ Max Unit
Note 1. Pulse Test; Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%.
CAUTION:
The sustaining voltage
must not
be measured on a curve tracer.
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