NTE396
Silicon NPN Transistor
Power Amplifier & High Speed Switch
(Compl to NTE397)
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (T
A
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.7mW/擄C
Total Device Dissipation (T
C
= +25擄C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Derate Above 25擄C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28.6mW/擄C
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
OFF Characteristics
Collector鈥揈mitter Sustaining Voltage V
CEO(sus)
I
C
= 50mA, I
B
= 0, Note 1
Collector Cutoff Current
I
CEO
I
CEX
I
CBO
Emitter Cutoff Current
ON Characteristics
(Note 1)
DC Current Gain
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter Saturation Voltage
h
FE
V
CE(sat)
V
BE(sat)
I
C
= 2mA, V
CE
= 10V
I
C
= 20mA, V
CE
= 10V
I
C
= 50mA, I
B
= 4mA
I
C
= 50mA, I
B
= 4mA
30
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
160
0.5
1.3
V
V
I
EBO
V
CE
= 300V, I
B
= 0
V
CE
= 450V, V
BE
= 1.5V
V
CB
= 360V, I
E
= 0
V
EB
= 6V, I
C
= 0
350
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
500
20
20
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Symbol
Test Conditions
Min Typ Max Unit
Note 1. Pulse Test; Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2%.
CAUTION:
The sustaining voltage
must not
be measured on a curve tracer.
NTE396 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
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