NTE395
Silicon PNP Transistor
Wide Band Linear Amplifier
Absolute Maximum Ratings:
Collector鈥揃ase Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector鈥揈mitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter鈥揃ase Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Power Dissipation (T
A
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Power Dissipation (T
C
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +200擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 485擄C/W
Thermal Resistance, Junction鈥搕o鈥揂mbient, R
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 775擄C/W
Electrical Characteristics:
(T
A
= +25擄C unless otherwise specified)
Parameter
Collector鈥揃ase Cutoff Current
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Breakdown Voltage
Static Forward Current Transfer Ratio
Base鈥揈mitter Voltage
Knee Voltage
Transition Frequency
Maximum Oscillation Frequency
Output Capacitance
Symbol
I
CBO
Test Conditions
V
CB
= 15V, I
E
= 0
Min
鈥?/div>
30
25
3
20
鈥?/div>
鈥?/div>
1.4
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.75
0.8
2.3
6.5
1.1
Max
50
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
V
V
GHz
GHz
pF
Unit
nA
V
V
V
V
(BR)CBO
I
C
= 100碌A, I
E
= 0
V
(BR)CEO
I
C
= 5mA, I
B
= 0
V
(BR)EBO
I
E
= 10碌A, I
C
= 0
h
21E
V
BE
V
CEK
f
T
f
C
22b
V
CE
= 10V, I
C
= 10mA, Note 1
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, Note 2
V
CE
= 15V, I
C
= 10mA
V
CE
= 15V, I
C
= 10mA
V
CB
= 15V, I
E
= 0, f = 1MHz
Note 1. Pulsed.
Note 2. V
CEK
tested with I
C
= 100ma and I
B
= values for which I
C
= 110mA at V
CE
= 1V.
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