NTE394
Silicon NPN Transistor
Power Amp, High Voltage Switch
Description:
The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use
in high voltage, fast switching applications.
Absolute Maximum Ratings:
Collector鈥揈mitter Voltage (V
BE
= 0), V
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector鈥揈mitter Voltage (I
B
= 0), V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter鈥揃ase Voltage (I
C
= 0), V
EB
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Continuous Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Power Dissipation (T
C
= +25擄C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150擄C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 鈥?5擄 to +150擄C
Thermal Resistance, Junction鈥搕o鈥揅ase, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25擄C/W
Electrical Characteristics:
(T
C
= +25擄C unless otherwise specified)
Parameter
Collector鈥揈mitter Cutoff Current
Symbol
I
CEO
I
CES
Emitter鈥揃ase Cutoff Current
Collector鈥揈mitter Sustaining Voltage
Collector鈥揈mitter Saturation Voltage
Base鈥揈mitter ON Voltage
DC Current Gain
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(on)
h
FE
Test Conditions
V
CE
= 300V, I
B
= 0
V
CE
= 500V, V
EB
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0, Note 1
I
C
= 3A, I
B
= 0.6A, Note 1
I
C
= 3A, V
CE
= 10V, Note 1
I
C
= 0.3A, V
CE
= 10V
I
C
= 3A, V
CE
= 10V
Min
鈥?/div>
鈥?/div>
鈥?/div>
400
鈥?/div>
鈥?/div>
30
10
Typ
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
150
鈥?/div>
Max
1
1
1
鈥?/div>
1.5
1.5
鈥?/div>
鈥?/div>
Unit
mA
mA
mA
V
V
V
Note 1. Pulse Test: Pulse Width = 300碌s, Duty Cycle = 1.5%.
NTE394 產(chǎn)品屬性
NTE
置換半導(dǎo)體
詳細(xì)信息
1
NTE394相關(guān)型號(hào)PDF文件下載
-
型號(hào)
版本
描述
廠商
下載
-
英文版
Silicon Complementary Transistors TV Sound Output, TV Vertic...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 160V; Transistor Polarity:NPN; Coll...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -160V; Transistor Polarity:PNP; Col...
NTE Electronics
-
英文版
Silicon Complementary Transistors AF Power Amplifier, High C...
NTE
-
英文版
BIPOLAR TRANSISTOR, NPN, 140V TO-3P; Transistor Polarity:NPN...
NTE Electronics
-
英文版
BIPOLAR TRANSISTOR, PNP, -140V, TO-3P; Transistor Polarity:P...
NTE Electronics
-
英文版
Silicon Complementary Transistors High Voltage, Medium Power...
NTE
-
英文版
Silicon PNP Transistor Line-Operated Series Pass/Switching R...
NTE
-
英文版
Transistor; PNP; 300 V; 3 V; 500 mA (Continuous); 20 W @ Tc ...
NTE Electronics
-
英文版
Silicon Complementary Transistors Audio Power Amplifier
NTE
-
英文版
Thermal Compound; 1 Gram/5 Tubes; White; Base Silicon Oil; F...
NTE Electronics
-
英文版
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflectio...
NTE
-
英文版
Integrted Circuit Voltage Regulator
NTE
-
英文版
Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflectio...
NTE
-
英文版
Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF
NTE
-
英文版
RF Bipolar Transistor; Transistor Polarity:NPN; Collector Em...
NTE Electronics
-
英文版
N-Channel Silicon Junction Field Effect Transistor
NTE
-
英文版
JFET-N-CH VHF AMP/MIX JFET-N-CH, VHF AMP/MIX NTE Field Effec...
NTE Electronics
-
英文版
Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and V...
NTE
-
英文版
Silicon Controlled Rectifier (SCR) Power Regulator Switch
NTE
1
2
